Manufacturing method of semiconductor device and semiconductor device thereof

ABSTRACT

A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a method for manufacturing a semiconductor device that comprises ordering and performing processing steps in a manner that prevents warpage deformation from occurring to a wafer and/or die due to mismatching thermal coefficients.

CROSS-REFERENCE TO RELATED APPLICATIONS/INCORPORATION BY REFERENCE

The present application is a continuation of U.S. patent applicationSer. No. 14/692,152, titled “MANUFACTURING METHOD OF SEMICONDUCTORDEVICE AND SEMICONDUCTOR DEVICE THEREOF,” filed Apr. 21, 2015, issuingon Nov. 8, 2016 as U.S. Pat. No. 9,490,231, which makes reference to,claims priority to, and claims the benefit of Korean Patent ApplicationNo. 10-2014-0108365, filed on Aug. 20, 2014 in the Korean IntellectualProperty Office and titled “MANUFACTURING METHOD OF SEMICONDUCTOR DEVICEAND SEMICONDUCTOR DEVICE THEREOF,” the contents of each of which arehereby incorporated herein by reference in their entirety.

FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT

[Not Applicable]

SEQUENCE LISTING

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MICROFICHE/COPYRIGHT REFERENCE

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BACKGROUND

Present systems, methods and/or architectures for forming electronicpackages with stacked components, for example utilizing a combination oforganic and inorganic materials with different respective thermalexpansion coefficients, are inadequate. Further limitations anddisadvantages of conventional and traditional approaches will becomeapparent to one of skill in the art, through comparison of suchapproaches with the present disclosure as set forth in the remainder ofthe present application with reference to the drawings.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the present disclosure, and are incorporated in andconstitute a part of this specification. The drawings illustrateexamples of the present disclosure and, together with the description,serve to explain various principles of the present disclosure. In thedrawings:

FIG. 1 is a flowchart illustrating an example method for manufacturing asemiconductor device, in accordance with various aspects of the presentdisclosure.

FIGS. 2A to 2K show cross-sectional views illustrating various aspectsof the example method shown in FIG. 1.

FIG. 3 is a flowchart illustrating an example method for manufacturing asemiconductor device, in accordance with various aspects of the presentdisclosure.

FIGS. 4A to 4L show cross-sectional views illustrating various aspectsof the example method shown in FIG. 3.

FIGS. 5A to 5J show cross-sectional views illustrating various aspectsof an example method for manufacturing a semiconductor device, inaccordance with various aspects of the present disclosure.

FIGS. 6A to 6K show cross-sectional views illustrating various aspectsof an example method for manufacturing a semiconductor device, inaccordance with various aspects of the present disclosure.

FIGS. 7A to 7I show cross-sectional views illustrating various aspectsof an example method for manufacturing a semiconductor device, inaccordance with various aspects of the present disclosure.

FIG. 8 is a flowchart illustrating an example method for manufacturing asemiconductor device, in accordance with various aspects of the presentdisclosure.

FIGS. 9A to 9I show cross-sectional views illustrating various aspectsof the example method shown in FIG. 8.

FIG. 10 is a flowchart illustrating an example method for manufacturinga semiconductor device, in accordance with various aspects of thepresent disclosure.

FIGS. 11A to 11I show cross-sectional views illustrating various aspectsof the example method shown in FIG. 10.

SUMMARY

Various aspects of this disclosure provide a semiconductor devicestructure and a method for manufacturing a semiconductor device. As anon-limiting example, various aspects of this disclosure provide amethod for manufacturing a semiconductor device that comprises orderingand performing processing steps in a manner that prevents warpagedeformation from occurring to a wafer and/or die due to mismatchingthermal expansion coefficients.

DETAILED DESCRIPTION OF VARIOUS ASPECTS OF THE DISCLOSURE

The following discussion presents various aspects of the presentdisclosure by providing various examples thereof. Such examples arenon-limiting, and thus the scope of various aspects of the presentdisclosure should not necessarily be limited by any particularcharacteristics of the provided examples. In the following discussion,the phrases “for example,” “e.g.,” and “exemplary” are non-limiting andare generally synonymous with “by way of example and not limitation,”“for example and not limitation,” and the like.

As utilized herein, “and/or” means any one or more of the items in thelist joined by “and/or”. As an example, “x and/or y” means any elementof the three-element set {(x), (y), (x, y)}. In other words, “x and/ory” means “one or both of x and y.” As another example, “x, y, and/or z”means any element of the seven-element set {(x), (y), (z), (x, y), (x,z), (y, z), (x, y, z)}. In other words, “x, y and/or z” means “one ormore of x, y, and z.”

The terminology used herein is for the purpose of describing particularexamples only and is not intended to be limiting of the disclosure. Asused herein, the singular forms are intended to include the plural formsas well, unless the context clearly indicates otherwise. It will befurther understood that the terms “comprises,” “includes,” “comprising,”“including,” and the like when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Thus, for example, a first element, afirst component or a first section discussed below could be termed asecond element, a second component or a second section without departingfrom the teachings of the present disclosure. Similarly, various spatialterms, such as “upper,” “lower,” “side,” and the like, may be used indistinguishing one element from another element in a relative manner. Itshould be understood, however, that components may be oriented indifferent manners, for example a semiconductor device may be turnedsideways so that its “top” surface is facing horizontally and its “side”surface is facing vertically, without departing from the teachings ofthe present disclosure.

FIG. 1 is a flowchart illustrating an example method for manufacturing asemiconductor device, in accordance with various aspects of the presentdisclosure.

Referring to FIG. 1, the example method of manufacturing a semiconductordevice may, for example, comprise preparing a dummy substrate (S10),forming an interposer (S11), connecting contact structures (S12),removing the dummy substrate (S13), attaching a wafer support system(WSS) (S14), connecting a semiconductor die (S15), encapsulating (S16),grinding (S17), removing the WSS (S18) and connecting a circuit board(S19).

The example manufacturing method of FIG. 1 will now be described in moredetail with reference to FIGS. 2A to 2K.

FIGS. 2A to 2K show cross-sectional views illustrating various aspectsof the example method shown in FIG. 1. It should be noted that FIGS. 2Ato 2K merely provide examples of various aspects of the method shown inFIG. 1. Accordingly, the scope of various aspects of the method shouldnot be limited by the example illustrations of FIGS. 2A to 2K.

For example, FIGS. 2A to 2C provide an example illustration of formingan interposer.

First, as illustrated in FIG. 2A, a dummy substrate 10 (or temporarymanufacturing substrate) is prepared, the dummy substrate 10 having agenerally flat first surface 10 a and a generally flat second surface 10b opposite to the first surface 10 a, and a dielectric layer 111 isformed on the first surface 10 a of the dummy substrate 10. The dummysubstrate 10 may, for example, include one of silicon, low-gradesilicon, glass (e.g., glass sheet, glass-reinforced epoxy, etc.), epoxy,silicon carbide, sapphire, quartz, ceramic, metal oxide, metal orequivalents thereof (e.g., aluminum, etc.), but aspects of the presentdisclosure are not limited thereto. The dielectric layer 111 may, forexample, be deposited on the first surface 10 a of the dummy substrate10 using chemical vapor deposition (CVD) equipment and then patterned bya photolithographic etching process and/or a laser process, therebyforming openings 111 a. Portions of the first surface 10 a of the dummysubstrate 10 may be exposed to the outside by the openings 111 a. Thedielectric layer 111 may comprise, for example, an oxide layer such as asilicon oxide layer, a silicon nitride layer, and equivalents thereof,but aspects of the present disclosure are not limited thereto.

As illustrated in FIG. 2B, a conductive redistribution layer (RDL) 112may be formed on the openings 111 a and the dielectric layer 111.Accordingly, the redistribution layer 112 may be brought into directcontact with the dummy substrate 10 through the openings 111 a. Theredistribution layer 112 may, for example, be formed by an electrolessplating process using a seed layer made of gold, silver, nickel,titanium and/or tungsten, an electroplating process using copper, etc.,and a photolithographic etching process using a photoresist, but aspectsof the present disclosure are not limited thereto. In addition, theredistribution layer 112 may, for example, include not only copper butone of a copper alloy, aluminum, an aluminum alloy, iron, an iron alloyor equivalents thereof, but aspects of the present disclosure are notlimited thereto.

As illustrated in FIG. 2C, the forming of the dielectric layer 111 andthe forming of the redistribution layer 112 may be repeatedly performedmultiple times, thereby forming an interposer 110 having a multi-layeredstructure. The interposer 110 may have the first surface 110 a and thesecond surface 110 b opposite to the first surface 110 a, and theredistribution layer 112 may be exposed to the first surface 110 a andthe second surface 110 b, for example through surface openings in thedielectric layer 111.

Though the interposer 110 may be formed by a fabrication (FAB) process,the present disclosure does not so limit the forming process of theinterposer 110.

As illustrated in FIG. 2D, contact structures 113 (such as conductivebumps or balls, pillars, or other contact structures comprising solder,copper, and/or other conductive material) may further be formed on theredistribution layer 112 exposed through the first surface 110 a of theinterposer 110. The contact structures 113 may be formed to be easilyconnected to a wafer support system (WSS) 120 to be described later. Thecontact structures 113 are electrically connected to the redistributionlayer 112 exposed through the first surface 110 a of the interposer 110.For example, volatile flux may be applied to a predetermined region ofthe redistribution layer 112 exposed to the outside through thedielectric layer 111, and the contact structures 113 can be positionedon the flux, followed by applying heat of a temperature ranging fromapproximately 150° C. to approximately 250° C. or 270° C. therebyconnecting the contact structures 113 to the redistribution layer 112while allowing the flux to volatilize. Thereafter, a cooling process isperformed to make the contact structures 113 mechanically/electricallyconnected to the redistribution layer 112.

As illustrated in FIG. 2E, the dummy substrate 10 may be removed fromthe second surface 110 b of the interposer 110. For example, the dummysubstrate 10 may be removed by grinding the same by a predeterminedthickness, followed by performing dry etching and/or wet etching,thereby completely removing the dummy substrate 10. As a result, thesecond surface 110 b of the interposer 110 may be exposed. For example,the removing of the dummy substrate 10 from the second surface 110 b ofthe interposer 110 may expose the redistribution layer 112 to theoutside through the dielectric layer 111.

As illustrated in FIG. 2F, a wafer support system (WSS) 120, which mayalso be referred to as a wafer support structure, may be attached to thefirst surface 110 a of the interposer 110. For example, the WSS 120 maybe attached to the first surface 110 a of the interposer 110 and thecontact structures 130 connected to the first surface 110 a of theinterposer 110 using an adhesive 114 (or epoxy). The WSS 120 may, forexample, support and fix the interposer 110 in a state in which thedummy substrate 10 is removed. The WSS 120 may, for example, be made ofa general insulating material or other materials.

As illustrated in FIG. 2G, the semiconductor die 130 may be electricallyconnected to the second surface 110 b of the interposer 110. Prior tothis process, in a state in which the first surface 110 a of theinterposer 110 is attached to the WSS 120, the second surface 110 b ofthe interposer 110 may be flipped to face upward. The semiconductor die130 has a first surface 130 a and a second surface 130 b opposite to thefirst surface 130 a, and a die contact 131 is provided on the secondsurface 130 b. The semiconductor die 130 is electrically connected tothe redistribution layer 112 formed on the second surface 110 b of theinterposer 110 through the die contact 131. For example, thesemiconductor die 130 may be connected to the interposer 110 in a flipchip configuration. The die contact 131 may, for example, furtherinclude a solder cap 131 a formed at its end to facilitate a connectionwith the interposer 110. The die contact 131 may, for example, generallyinclude a conductive structure formed on and/or attached to bond pads onthe die 130 (e.g., a bump on a bumped die, etc.).

As illustrated in FIG. 2H, an underfill 132 may be injected into a spacebetween the semiconductor die 130 and the interposer 110, followed byhardening. For example, the underfill 132 may be interposed between thesecond surface 130 b of the semiconductor die 130 and the second surface110 b of the interposer 110 and may be formed to cover the die contact131 and the exposed redistribution layer 112. The semiconductor die 130may, for example, be more stably fixed on the interposer 110 by theunderfill 132 such that the semiconductor die 130 and the interposer 110are not electrically disconnected from each other in spite of adifference in respective thermal expansion coefficients. In some cases,if a filler diameter of the encapsulant 140 (to be described later) issmaller than a gap between the semiconductor die 130 and the interposer110, the encapsulant 140 can be formed in the gap between thesemiconductor die 130 and the interposer 110. In such a scenario, aseparate underfill 131 might not be utilized, or encapsulant 140 cancomprise underfill 131.

As illustrated in FIG. 2I, the interposer 110 and the semiconductor die130 may be encapsulated by the encapsulant 140. The encapsulant 140 may,for example, be formed to entirely cover the second surface 110 b of theinterposer 110 and the semiconductor die 130. Such covering may then,for example if exposure of the semiconductor die 130 is desired, befollowed by back grinding and/or etching or otherwise thinning (ifneeded) to allow the first surface 130 a of the semiconductor die 130 tobe exposed from the encapsulant 140. The interposer 110 and thesemiconductor die 130 may be protected from external circumstances bythe encapsulant 140. The encapsulant 140 may, for example, includegeneral epoxy, paste, molding compound, and equivalents thereof, but isnot limited thereto.

As illustrated in FIG. 2J the interposer 110 and the encapsulant 140 maybe diced to be divided into discrete semiconductor modules. The dicingmay, for example, be performed by blade dicing, laser dicing, or usingany of a variety of dicing tools, but aspects of the present disclosureare not limited thereto. Here, the semiconductor module refers to aninterposer having one or more semiconductor dies 130 mounted thereon andencapsulated by the encapsulant 140. For example, the interposer havingthe semiconductor dies 130 mounted thereon may be divided intoindividual semiconductor module units. In FIG. 2J, two semiconductordies 130 included in the semiconductor module are illustrated. However,only one or more than two semiconductor dies 130 might be included inthe semiconductor module, and the present disclosure does not limit thenumber of semiconductor dies included per semiconductor module.

As illustrated in FIG. 2K, a semiconductor device includingsemiconductor modules each formed by dicing the interposer 110 and theencapsulant 140, may be completed. The WSS 120 and adhesive 114 may beremoved, for example by mechanical and/or electrical means. Note thatalthough FIG. 2J shows the dicing occurring through the WSS 120, inanother example the dicing may penetrate the interposer 110 but not theWSS 120, which may later be re-used. The completed semiconductor devicemay be mounted to be electrically connected (e.g., directly connected)to a printed circuit board (PCB) (or wafer, other semiconductor device,die, etc.) through the contact structures 113 formed on the firstsurface 110 a of the interposer 110. Note that the WSS 120 and adhesive114 may be removed prior to the dicing shown in FIG. 2J and/or thedicing may leave the WSS 120 intact. Such an operation may, for example,allow the WSS 120 to be reused.

As described above, according to this example, the semiconductor deviceincluding multiple redistribution layers is completed. In addition, thesemiconductor device completed according to this embodiment may haveanother semiconductor device, package or component further mountedthereto.

As described above, according to this embodiment, the placement andencapsulating of the semiconductor die 130 via encapsulant 140 isarranged as a later or final process in the manufacturing method of thesemiconductor device, for example after the formation of interposer 110,thereby providing a semiconductor device having suppressed wafer warpagedeformation due to a difference in the thermal expansion coefficientbetween the semiconductor die 130 and the redistribution layer 112.

FIG. 3 is a flowchart illustrating an example method for manufacturing asemiconductor device, in accordance with various aspects of the presentdisclosure.

Referring to FIG. 3, the example method of manufacturing a semiconductordevice may, for example, comprise preparing a dummy substrate (S20),forming an interposer (S21), connecting contact structures (S22), firstencapsulating (S23), removing the dummy substrate (S24), attaching awafer support system (WSS) (S25), connecting a semiconductor die (S26),second encapsulating (S27), grinding (S28) and removing the WSS (S29).The example method of FIG. 3 may, for example, share any or severalaspects or elements with the example methods of FIGS. 1-2 discussedpreviously and/or with any method discussed herein.

The example manufacturing method of FIG. 3 will now be described in moredetail with reference to FIGS. 4A to 4L. It should be noted that FIGS.4A to 4L merely provide examples of various aspects of the method 300.Accordingly, the scope of various aspects of the method 300 should notbe limited by the example illustrations of FIGS. 4A to 4L.

FIGS. 4A to 4L are cross-sectional views illustrating various aspects ofthe example method shown in FIG. 3.

For example, FIGS. 4A to 4L provide an example illustration of formingan interposer.

First, as illustrated in FIG. 4A, a dummy substrate 20 (or temporarymanufacturing substrate) is prepared, the dummy substrate 20 having agenerally flat first surface 20 a and a generally flat second surface 20b opposite to the first surface 20 a, and a dielectric layer 211 isformed on the first surface 20 a of the dummy substrate 20. The dummysubstrate 20 may, for example, include one of silicon, low-gradesilicon, glass, silicon carbide, sapphire, quartz, ceramic, metal oxide,metal or equivalents thereof, but aspects of the present disclosure arenot limited thereto. The dielectric layer 211 may, for example, bedeposited on the first surface 20 a of the dummy substrate 20 usingchemical vapor deposition (CVD) equipment and then patterned by aphotolithographic etching process and/or a laser process, therebyforming openings 211 a. Portions of the first surface 20 a of the dummysubstrate 20 may be exposed by the openings 211 a. The dielectric layer211 may, for example, include an oxide layer such as a silicon oxidelayer, a silicon nitride layer, or equivalents thereof, but aspects ofthe present disclosure are not limited thereto.

As illustrated in FIG. 4B, a conductive redistribution layer (RDL) 212may be formed on the openings 211 a and the dielectric layer 211.Accordingly, the redistribution layer 212 may be brought into directcontact with the dummy substrate 20 through the openings 211 a. Theredistribution layer 212 may, for example, be formed by an electrolessplating process using a seed layer made of gold, silver, nickel,titanium and/or tungsten, an electroplating process using copper, etc.,and a photolithographic etching process using a photoresist, but aspectsof the present disclosure are not limited thereto. In addition, theredistribution layer 212 may, for example, include not only copper butone of a copper alloy, aluminum, an aluminum alloy, iron, an iron alloyor equivalents thereof, but aspects of the present disclosure are notlimited thereto.

As illustrated in FIG. 4C, the forming of the dielectric layer 211 andthe forming of the redistribution layer 212 may be repeatedly performedmultiple times, thereby forming an interposer 210 having a multi-layeredstructure. The interposer 210 may have the first surface 210 a and thesecond surface 210 b opposite to the first surface 210 a, and theredistribution layer 212 may be exposed to the first surface 210 a andthe second surface 210 b, for example through surface openings in thedielectric layer 211.

Though the interposer 210 may be formed by a fabrication (FAB) process,the present disclosure does not so limit the forming process of theinterposer 210.

As illustrated in FIG. 4D, contact structures 213 (such as conductivebumps, balls, pillars, or other contact structures comprising solder,copper, and/or other conductive material) may further be formed on theredistribution layer 212 exposed through the first surface 210 a of theinterposer 210. The contact structures 213 may be formed to be easilyconnected to a wafer support system (WSS) 220 to be described later. Thecontact structures 213 are electrically connected to the redistributionlayer 212 exposed through the first surface 210 a of the interposer 210.For example, volatile flux may be applied to a predetermined region ofthe redistribution layer 112 exposed to the outside through thedielectric layer 111, and the contact structures 113 are positioned onthe flux, followed by applying heat of a temperature ranging fromapproximately 150° C. to approximately 250° C. or 270° C., therebyconnecting the contact structures 113 to the redistribution layer 112while allowing the flux to volatilize. Thereafter, a cooling process isperformed to make the contact structures 113 mechanically/electricallyconnected to the redistribution layer 112.

As illustrated in FIG. 4E, the first surface 210 a of the interposer 210between the contact structures 213 may be encapsulated by a firstencapsulant 213 a. The first encapsulant 213 a may, for example, beformed to have a smaller thickness than a second encapsulant 240 to bedescribed later. The first encapsulant 213 a may, for example, be formedto have a smaller thickness than a radius (e.g., a typical or averageradius) of the contact structures 213. Also for example, the firstencapsulant 213 a may, for example, be formed to have a thickness thatis between a radius and a diameter of the contact structures 213. Thefirst encapsulant 213 a may, for example, prevent or reduce waferwarpage deformation due to a difference in the respective thermalexpansion coefficients of the contact structures 213 and theredistribution layer 212. In addition, the first encapsulant 213 a mayprotect the interposer 210 from external circumstances.

As illustrated in FIG. 4F, the dummy substrate 20 may be removed fromthe second surface 210 b of the interposer 210. For example, the dummysubstrate 20 may be removed by grinding the same by a predeterminedthickness, followed by performing dry etching and/or wet etching,thereby completely removing the dummy substrate 10. As the result of theremoving of the dummy substrate 20, the second surface 210 b of theinterposer 210 may be exposed. For example, the removing of the dummysubstrate 20 from the second surface 210 b of the interposer 210 mayexpose the redistribution layer 212 through the dielectric layer 211.

As illustrated in FIG. 4G, a wafer support system (WSS) 220, which mayalso be referred to as a wafer support structure, may be attached to thefirst surface 210 a of the interposer 210. For example, the WSS 220 maybe attached to the first surface 210 a of the interposer 210 and thecontact structures 213 connected to the first surface 210 a of theinterposer 210 using an adhesive 214 (or epoxy). The WSS 220 may, forexample, support and fix the interposer 210 in a state in which thedummy substrate 20 is removed. The WSS 220 may, for example, be made ofa general insulating material or other materials.

As illustrated in FIG. 4H, the semiconductor die 230 may be electricallyconnected to the second surface 210 b of the interposer 210. Prior tothis process, in a state in which the first surface 210 a of theinterposer 210 is attached to the WSS 220, the second surface 210 b ofthe interposer 210 may be flipped to face upward. The semiconductor die230 has a first surface 230 a and a second surface 230 b opposite to thefirst surface 230 a, and a die contact 231 may be provided on the secondsurface 230 b. The semiconductor die 230 may, for example, beelectrically connected to the redistribution layer 212 formed on thesecond surface 210 b of the interposer 210 through the die contact 231.For example, the semiconductor die 230 may be connected to theinterposer 210 in a flip chip configuration. The die contact 231 may,for example, further include a solder cap 231 a formed at its end tofacilitate a connection with the interposer 210. The die contact 131may, for example, generally include a conductive structure formed onand/or attached to bond pads on the die 130 (e.g., a bump on a bumpeddie, etc.).

As illustrated in FIG. 4I, an underfill 232 may be injected into a spacebetween the semiconductor die 230 and the interposer 210, followed byhardening. For example, the underfill 232 may be interposed between thesecond surface 230 b of the semiconductor die 230 and the second surface210 b of the interposer 210 and may be formed to cover the die contact231 and the exposed redistribution layer 212. The semiconductor die 230may, for example, be more stably fixed on the interposer 210 by theunderfill 232 such that the semiconductor die 230 and the interposer 210are not electrically disconnected from each other in spite of adifference in respective thermal expansion coefficients. In some cases,if a filler diameter of the encapsulant 240 to be described later issmaller than a gap between the semiconductor die 230 and the interposer210, the encapsulant 240 can be formed in the gap between thesemiconductor die 230 and the interposer 210. In such a scenario, aseparate underfill 231 might not be utilized, or encapsulant 240 cancomprise underfill 231.

As illustrated in FIG. 4J, the interposer 210 and the semiconductor die230 may be encapsulated by the encapsulant 240. The encapsulant 240 may,for example, be formed to entirely cover the second surface 210 b of theinterposer 210 and the semiconductor die 230. Such covering may then,for example if exposure of the semiconductor die 230 is desired, befollowed by back grinding and/or etching or otherwise thinning (ifneeded) to allow the first surface 230 a of the semiconductor die 230 tobe exposed from the encapsulant 240. The interposer 210 and thesemiconductor die 230 may be protected from external circumstances bythe encapsulant 240. The encapsulant 240 may, for example, includegeneral epoxy, paste, molding compound, and equivalents thereof, but isnot limited thereto.

As illustrated in FIG. 4K, the interposer 210 and the encapsulant 240may be diced to be divided into discrete semiconductor modules. Thedicing may, for example, be performed by blade dicing, laser dicing, orusing any of a variety of dicing tools, but aspects of the presentdisclosure are not limited thereto. Here, the semiconductor modulerefers to an interposer having one or more semiconductor dies 230mounted thereon and encapsulated by the encapsulant 240. For example,the interposer having the semiconductor dies 230 mounted thereon may bedivided into individual semiconductor module units. In FIG. 4K, twosemiconductor dies 230 included in the semiconductor module areillustrated. However, only one or more than two semiconductor dies 230might be included in the semiconductor module, and the presentdisclosure does not limit the number of semiconductor dies included persemiconductor module.

As illustrated in FIG. 4L a semiconductor device including semiconductormodules each formed by dicing the interposer 210 and the encapsulant240, may be completed. The completed semiconductor device may be mountedto be electrically connected (e.g., directly connected) to a wafer (orPCB, other semiconductor device, die, etc.) through the contactstructures 213 formed on the first surface 210 a of the interposer 210.Note that the WSS 220 and adhesive 214 may be removed prior to thedicing shown in FIG. 4K and/or the dicing may leave the WSS 220 intact.Such an operation may, for example, allow the WSS 220 to be reused.

As described above, according to this example, the encapsulating may beperformed on each of the first surface 210 a of the interposer 210 andthe second surface 210 b of the interposer 210, thereby providing asemiconductor device having suppressed wafer warpage deformation due toa difference in the thermal expansion coefficient between thesemiconductor die 230 or the contact structures 213 and theredistribution layer 212.

FIGS. 5A to 5J show cross-sectional views illustrating various aspectsof an example method for manufacturing a semiconductor device, inaccordance with various aspects of the present disclosure. The examplemethod aspects of FIG. 5 may, for example, share any or several aspectsor elements with the example method aspects of FIGS. 1-4 discussedpreviously and/or with any method discussed herein.

As illustrated in FIG. 5A, a first dummy substrate 30 is prepared, thefirst dummy substrate 30 having a generally flat first surface 30 a anda generally flat second surface 30 b opposite to the first surface 30 a,and a first interposer 310 may be formed on the first surface 30 a ofthe first dummy substrate 30. The first interposer 310 includes a firstdielectric layer 311 and a first redistribution layer 312. The firstinterposer 310, for example having a multi-layered structure, may becompleted by repeatedly performing the forming of the first dielectriclayer 311 and the forming of the first redistribution layer 312 multipletimes (e.g., repeatedly forming respective portions thereof). The firstinterposer 310 may have a first surface 310 a and a second surface 310 bopposite to the first surface 310 a, and the first redistribution layer312 may be exposed to the first surface 310 a and the second surface 310b (e.g., through openings in the first dielectric layer 311).

As illustrated in FIG. 5B, a first WSS 320 may be attached to the firstsurface 310 a of the first interposer 310. For example, the first WSS320 may be attached to the first surface 310 a of the first interposer310 using a first adhesive 313 (or epoxy). The first WSS 320 may supportand fix the interposer 310 in a state in which the first dummy substrate30 is removed. The first WSS 320 may have a first surface 320 a and asecond surface 320 b opposite to the first surface 320 a and adhered tothe first adhesive 313.

As illustrated in FIG. 5C, the first dummy substrate 30 may be removedfrom the second surface 310 b of the first interposer 310. Prior to thisprocess, in a state in which the first surface 310 a of the firstinterposer 310 is attached to the WSS 320, the second surface 310 b ofthe interposer 310 may be flipped to face upward. The first dummysubstrate 30 may then be removed by grinding the same by a predeterminedthickness, followed by performing dry etching and/or wet etching,thereby completely removing the first dummy substrate 30. As a result,the second surface 310 b of the first interposer 310 may be exposed tothe outside.

As illustrated in FIG. 5D, a second interposer 314 may be formed on thesecond surface 310 b of the first interposer 310. The second interposer314 includes a second dielectric layer 314 b and a conductive secondredistribution layer 314 a. The second redistribution layer 314 a may,for example, be formed as a redistribution layer having a relativelylarge width relative to general connecting traces (e.g., defined as apad or a land as well).

As illustrated in FIG. 5E, a second WSS 330 may be attached to anexposed surface (e.g., a top surface) of the second interposer 314. Forexample, the second WSS 330 may be attached to the exposed surface ofthe second interposer 314 using a second adhesive 315. The second WSS330 may, for example, support and fix the first interposer 310 and thesecond interposer 314 in a state in which the first WSS 320 is removed.

As illustrated in FIG. 5F, the first WSS 320 may be removed from thefirst surface 310 a of the first interposer 310. Prior to this process,in a state in which the second WSS 330 is attached to the one surface(e.g., the top surface) of the second interposer 314, the first surface310 a of the first interposer 310 may be flipped to face upward. Then,the first WSS 320 may be removed by grinding the same by a predeterminedthickness, followed by performing dry etching and/or wet etching,thereby completely removing the first WSS 320. As a result, the firstsurface 310 a of the first interposer 310 is exposed to the outside(e.g., as it was also shown back at FIG. 5A). Note that other techniquesfor WSS removal may also be utilized in the WSS-removal steps discussedherein. For example, the first adhesive 313 may be photochemicallyunzipped (e.g., prior to bonding the second WSS 330.

As illustrated in FIG. 5G, the semiconductor die(s) 340 may beelectrically connected to the first surface 310 a of the firstinterposer 310. The semiconductor die 340 has a first surface 340 a anda second surface 340 b opposite to the first surface 340 a, and a diecontact 341 may be provided on the second surface 340 b. Thesemiconductor die 340 may, for example, be electrically connected to thefirst redistribution layer 312 formed on the first surface 310 a of thefirst interposer 310 through the die contact 341. For example, thesemiconductor die 340 may be connected to the first interposer 310 in aflip chip configuration. The die contact 341 may, for example, furtherinclude a solder cap (not shown) formed at its end to facilitate aconnection with the first interposer 310. The die contact 341 may, forexample, generally include a conductive structure formed on and/orattached to bond pads on the die 340 (e.g., a bump on a bumped die,etc.).

As illustrated in FIG. 5H, an underfill 342 may be injected into a spacebetween the semiconductor die 340 and the first interposer 310, followedby hardening. For example, the underfill 342 may be interposed betweenthe second surface 340 b of the semiconductor die 340 and the firstsurface 310 a of the first interposer 310 and may be formed to cover thedie contact 341 and the exposed redistribution layer 312. Thesemiconductor die 340 may, for example, be more stably fixed on thefirst interposer 310 by the underfill 342 such that the semiconductordie 340 and the first interposer 310 are not electrically disconnectedfrom each other in spite of a difference in respective thermal expansioncoefficients. In some cases, if a filler diameter of the encapsulant 350to be described later is smaller than a gap between the semiconductordie 340 and the first interposer 310, the encapsulant 350 can be formedin the gap between the semiconductor die 340 and the first interposer310. In such a scenario, a separate underfill 342 might not be utilized,or encapsulant 350 can comprise underfill 342. Note that in any of theunderfilling steps discussed herein, the underfilling need not beperformed by dispensing or injecting the underfill after die attachment.For example, the underfill may be pre-applied in a film or liquid formprior to die attachment.

As illustrated in FIG. 5I, the first interposer 310 and thesemiconductor die 340 may be encapsulated by the encapsulant 350. Theencapsulant 350 may, for example, be formed to entirely cover the firstsurface 310 a of the first interposer 310 and the semiconductor die 340.Such covering may then, for example if exposure of the semiconductor die340 is desired, be followed by back grinding and/or etching or otherwisethinning (if needed) to allow the first surface 340 a of thesemiconductor die 340 to be exposed from the encapsulant 350. The firstinterposer 310 and the semiconductor die 340 may be protected fromexternal circumstances by the encapsulant 350. The encapsulant 350 may,for example, include general epoxy, paste, molding compound, andequivalents thereof, but is not limited thereto.

As illustrated in FIG. 5J, the second WSS 330 attached to the surface ofthe second interposer 314 may be removed and the exposed first surface340 a of the semiconductor die 340 (or encapsulant above thesemiconductor die 340 if present) may be attached to a second dummysubstrate 360. Contact structures 370 (such as conductive bumps,pillars, balls, or other contact structures comprising solder, copper,and/or other conductive material) may be formed on the secondredistribution layer 314 a exposed to the surface of the secondinterposer 314. For example, the contact structures 370 may beelectrically connected to the second redistribution layer 314 a exposedto the first surface of the second interposer 314 (e.g., exposed throughopenings in the second dielectric layer 314 b). For example, theencapsulant 350 resulting after the grinding (if performed) and thefirst surface 340 a of the semiconductor die 340 is attached to thesecond dummy substrate 360, a plurality of semiconductor dies 340attached to the second dummy substrate 360 are divided into individualsemiconductor devices each including at least one semiconductor die,followed by connecting the contact structures 370 to the exposed surfaceof the second interposer 314 in each of the individual semiconductordevices.

As described above, according to this example, the placement andencapsulating of the semiconductor die 340 is arranged as a final (or alater) process in the manufacturing method of the semiconductor device,for example after the formation of interposer 210, thereby providing asemiconductor device having suppressed wafer warpage deformation due toa difference in the thermal expansion coefficient between thesemiconductor die 340 and the first redistribution layer 312.

FIGS. 6A to 6K show cross-sectional views illustrating various aspectsof an example method for manufacturing a semiconductor device, inaccordance with various aspects of the present disclosure. The examplemethod aspects of FIG. 6 may, for example, share any or several aspectsor elements with the example method aspects of FIGS. 1-5 discussedpreviously and/or with any method discussed herein.

As illustrated in FIG. 6A, a dummy substrate 40 is prepared, the dummysubstrate 40 having a generally flat first surface 40 a and a generallyflat second surface 40 b opposite to the first surface 40 a, and a firstinterposer 410 may be formed on the first surface 40 a of the dummysubstrate 40. The first interposer 410 includes a first dielectric layer411 and a first redistribution layer 412. The first interposer 410, forexample having a multi-layered structure, may be completed by repeatedlyperforming the forming of the first dielectric layer 411 and the formingof the first redistribution layer 412 multiple times (e.g., repeatedlyforming respective portions thereof). The first interposer 410 may havethe first surface 410 a and the second surface 410 b opposite to thefirst surface 410 a, and the first redistribution layer 412 may beexposed to the first surface 410 a and the second surface 410 b (e.g.,through openings in the first dielectric layer 411).

As illustrated in FIG. 6B, a first WSS 420 may be attached to the firstsurface 410 a of the first interposer 410. For example, the first WSS420 may be attached to the first surface 410 a of the first interposer410 using a first adhesive 413. The first WSS 420 may support and fixthe first interposer 410 in a state in which the dummy substrate 40 isremoved. The first WSS 420 may have a first surface 420 a and a secondsurface 420 b opposite to the first surface 420 a and adhered to thefirst adhesive 413.

As illustrated in FIG. 6C, the dummy substrate 40 may be removed fromthe second surface 410 b of the first interposer 410. Prior to thisprocess, in a state in which the first surface 410 a of the firstinterposer 410 is attached to the first WSS 420, the second surface 410b of the first interposer 410 may be flipped to face upward. The dummysubstrate 40 may then be removed by grinding the same by a predeterminedthickness, followed by performing dry etching and/or wet etching,thereby completely removing the dummy substrate 40. As a result, thesecond surface 410 b of the first interposer 410 may be exposed to theoutside.

As illustrated in FIG. 6D, a second interposer 414 may be formed on thesecond surface 410 b of the first interposer 410. The second interposer414 includes a second dielectric layer 414 b and a conductive secondredistribution layer 414 a. The second redistribution layer 414 a may,for example, be formed as a redistribution layer having a relativelylarge width relative to general connecting traces (e.g., defined as apad or a land as well).

As illustrated in FIG. 6E, a second WSS 430 may be attached to anexposed surface (e.g., a top surface) of the second interposer 414. Forexample, the second WSS 430 may be attached to the one exposed surfaceof the second interposer 414 using a second adhesive 415. The second WSS430 may, for example, support and fix the first interposer 410 and thesecond interposer 414 in a state in which the first WSS 420 is removed.

As illustrated in FIG. 6F, the first WSS 420 may be removed from thefirst surface 410 a of the first interposer 410. Prior to this process,in a state in which the second WSS 430 is attached to the one surface(e.g., the top surface) of the second interposer 414, the first surface410 a of the first interposer 410 may be flipped to face upward. Then,the first WSS 420 may be removed by grinding the same by a predeterminedthickness, followed by performing dry etching and/or wet etching,thereby completely removing the first WSS 420. As a result, the firstsurface 410 a of the first interposer 410 is exposed to the outside(e.g., as it was also shown back at FIG. 6A). Note that other techniquesfor WSS removal may also be utilized in the WSS-removal steps discussedherein. For example, the first adhesive 413 may be photochemicallyunzipped (e.g., prior to bonding the second WSS 430.

As illustrated in FIG. 6G, the semiconductor die(s) 440 may beelectrically connected to the first surface 410 a of the firstinterposer 410. Each of the semiconductor dies 440 has a first surface440 a and a second surface 440 b opposite to the first surface 440 a,and a die contact 441 may be provided on the second surface 440 b. Thesemiconductor dies 440 may, for example, be electrically connected tothe first redistribution layer 412 formed on the first surface 410 a ofthe first interposer 410 through the die contact 441. For example, thesemiconductor die(s) 440 may be connected to the first interposer 410 ina flip chip configuration. The die contact 441 may, for example, furtherinclude a solder cap (not shown) formed at its end to facilitate aconnection with the first interposer 410. The die contact 441 may, forexample, generally include a conductive structure formed on and/orattached to bond pads on the die(s) 440 (e.g., a bump on a bumped die,etc.).

As illustrated in FIG. 6H, an underfill 442 may be injected into a spacebetween the semiconductor dies 440 and the first interposer 410,followed by hardening. For example, the underfill 442 may be interposedbetween the second surface 440 b of the semiconductor die(s) 340 and thefirst surface 410 a of the first interposer 410 and may be formed tocover the die contact 441 and the exposed redistribution layer 412. Thesemiconductor dies 440 may, for example, be more stably fixed on thefirst interposer 410 by the underfill 442 such that the semiconductordies 440 and the first interposer 410 are not electrically disconnectedfrom each other in spite of a difference in respective thermal expansioncoefficients. In some cases, if a filler diameter of the encapsulant 450to be described later is smaller than a gap between the semiconductordie(s) 440 and the first interposer 410, the encapsulant 450 can beformed in the gap between the semiconductor die(s) 440 and the firstinterposer 410. In such a scenario, a separate underfill 442 might notbe utilized, or encapsulant 450 can comprise underfill 442. Note that inany of the underfilling steps discussed herein, the underfilling neednot be performed by dispensing or injecting the underfill after dieattachment. For example, the underfill may be pre-applied in a film orliquid form prior to die attachment.

As illustrated in FIG. 6I, a copper pillar 443 is formed between thesemiconductor dies 440 on the first surface 410 a of the firstinterposer 410. The copper pillar 443 is made of a conductive materialand is electrically connected to the first redistribution layer 412exposed to the first surface 410 a of the first interposer 410. Thecopper pillar 443 may, for example, be preformed and placed, built up onthe first redistribution layer 412, etc. The copper pillar 443 may, forexample, be cylindrical and/or columnar. The copper pillar 443 may, forexample, comprise a circular, elliptical, rectangular or squarecross-section (e.g., a horizontal or axial cross-section). Also forexample, the copper pillar 443 may be configured as a wall or cage(e.g., enclosing some or all sides of the semiconductor dies 440). Forexample, the copper pillar 443 may be plated or formed from preformedwire (e.g., copper, gold, aluminum, or other conductive material) bondedto the first interposer 410.

As illustrated in FIG. 6J, the first surface 410 a of the firstinterposer 410, the semiconductor dies 440 and the copper pillar 443 maybe encapsulated by an encapsulant 450. For example, the encapsulant 450may be formed to entirely cover the first surface 410 a of the firstinterposer 410, the semiconductor dies 440 and the copper pillar 443.Such covering may then, for example, be followed by back grinding and/oretching or otherwise thinning (if needed) to allow the first surface 440b of the semiconductor die 440 and/or at least one surface of the copperpillar 443 to be exposed to the outside. The semiconductor dies 440 andthe first interposer 410 may be protected from external circumstances bythe encapsulant 450. The encapsulant 450 may, for example, includegeneral epoxy, paste, molding compound, and/or equivalents thereof, butnot limited thereto.

As illustrated in FIG. 6K, contact structures 470 (such as conductivebumps, pillars, balls, or other contact structures comprising solder,copper, or other conductive material) may be connected to a surface ofthe copper pillar 443. For example, the contact structures 470 may beelectrically connected to a surface (e.g., an end surface) of the copperpillar 443 exposed through the encapsulant 450.

Though not shown, the second WSS 430 may be removed at this point and/ormay be retained for further processing steps if desired.

As described above, according to this example, the placement andencapsulating of the semiconductor dies 440 and the copper pillar 443formed between the semiconductor dies 440 is arranged as a final (orlater) process in the manufacturing method of the semiconductor device,for example after the formation of interposer 410, thereby providing asemiconductor device having suppressed wafer warpage deformation due toa difference in the thermal expansion coefficient between thesemiconductor die 440 and the first redistribution layer 412 and betweenthe copper pillar 443 and the first redistribution layer 412.

FIGS. 7A to 7I show cross-sectional views illustrating various aspectsof an example method for manufacturing a semiconductor device, inaccordance with various aspects of the present disclosure. The examplemethod aspects of FIG. 7 may, for example, share any or several aspectsor elements with the example method aspects of FIGS. 1-6 discussedpreviously and/or with any method discussed herein.

As illustrated in FIG. 7A, a dummy substrate 50 is prepared, the dummysubstrate 50 having a generally flat first surface 50 a and a generallyflat second surface 50 b opposite to the first surface 50 a, and a firstinterposer 510 may be formed on the first surface 50 a of the dummysubstrate 50. The first interposer 510 includes a first dielectric layer511 and a first redistribution layer 512. The first interposer 510, forexample having a multi-layered structure, may be completed by repeatedlyperforming the forming of the first dielectric layer 511 and the formingof the first redistribution layer 512 multiple times (e.g., repeatedlyforming respective portions thereof). The first interposer 510 may havea first surface 510 a and a second surface 510 b opposite to the firstsurface 510 a, and the first redistribution layer 512 may be exposed tothe first surface 510 a and the second surface 510 b (e.g., throughopenings in the first dielectric layer 511).

As illustrated in FIG. 7B, a second interposer 514 may be formed on thesecond surface 510 b of the first interposer 510. The second interposer514, for example, includes a second dielectric layer 514 b and aconductive second redistribution layer 514 a. For example, the seconddielectric layer 514 b may be made of polyimide and the secondredistribution layer 514 a may be made of copper, but aspects of thepresent disclosure are not limited thereto. At least a portion of therespective materials (e.g., dielectric materials) utilized in formingthe first interposer 510 and the second interposer 514 may be different.Also for example, as discussed herein, there may be differences instructural feature characteristics (e.g., layer thicknesses, conductorwidths, etc.) between the first interposer 510 and the second interposer514.

As illustrated in FIG. 7C, one or more insulation fillers 521 may beformed on the first surface of the second interposer 514 to be spacedapart from each other. The insulation fillers 521 may, for example, bemade of an insulating material. In addition, one or more conductive padlayers 520 connected to the second redistribution layer 514 a are formedbetween a first surface of the second interposer 514 and the insulationfillers 521. The conductive pad layers 520 may, for example, have astructure in which one or more conductive material layers are stackedone on another. For example, each of the conductive pad layers 520 maycomprise a first conductive layer 520 c formed on (e.g., directly on) asurface of the second interposer 514, a second conductive layer 520 bformed on (e.g., directly on) the first conductive layer 520 c, and athird conductive layer 520 a formed on (e.g., directly on) the secondconductive layer 520 b. Here, the first conductive layer 520 c and thethird conductive layer 520 a may be formed to have the same thickness.In addition, the second conductive layer 520 b may have a largerthickness than the first conductive layer 520 c and the third conductivelayer 520 a. In the present example, since the first conductive layer520 c and the third conductive layer 520 a have the same thickness, abalance between the first interposer 510 and the second interposer 514may be kept, and wafer warpage deformation due to thermal expansion maybe suppressed. In addition, the first conductive layer 520 c and thethird conductive layer 520 a may be formed using the same material(e.g., the same material as the second conductive layer 520 b).Alternatively, the first conductive layer 520 c and the third conductivelayer 520 a may be formed using a material that is different from thesecond conductive layer 520 b. In the present example, thermal expansioncoefficients of the conductive pad layers 520 may be adjusted bycontrolling proportions of materials forming the first conductive layer520 c, the third conductive layer 520 a and the second conductive layer520 b and/or by adjusting the respective types of material. For example,the first conductive layer 520 c and the third conductive layer 520 amay be made completely or mostly of copper and the second conductivelayer 520 b may be made completely or mostly of nickel.

In the present example, one or more insulation fillers 521 may be formedon one surface of the second interposer 514 to be spaced apart from eachother, and one or more conductive pad layers 520 connected to the secondredistribution layer 514 a may be formed between the one surface of thesecond interposer 514 and the insulation fillers 521, but aspects of thepresent disclosure are not limited thereto. Alternatively, theconductive pad layers 520 may be formed on the one surface of the secondinterposer 514 and the insulation fillers 521 may then be formed. Inthis case, the insulation fillers 521 may serve to support theconductive pad layers 520 to be balanced with respect to each other,thereby suppressing wafer warpage deformation from occurring to theconductive pad layers 520. Note that although the particular exampleshown in FIG. 7 uses a combination of conductive layers and insulationfillers 521 to form a stiffener structure, other materials may also beutilized. For example, one or more or all of the conductive layers 520may be replaced with insulating (or dielectric) layers. Conductivepathways and/or vias may then be formed on or through insulative layersas needed. Conversely, one or more insulation fillers 521 may bereplaced with conductive material, depending on the implementation.

As illustrated in FIG. 7D, contact structures 522 (such as conductivebumps, pillars, balls, or other contact structures comprising solder,copper, and/or other conductive material) are formed on conductive padlayers alternately formed among the conductive pad layers 520 formedbetween the insulation fillers 521. The contact structures 522 may, forexample, include copper pillars 522 a (e.g., columns, pillars,pedestals, extended pads, etc.) connected to the conductive pad layers520 and solder balls 522 b (or caps) formed in or on the copper pillars522 a. For example, the copper pillars 522 a may be plated or formedfrom preformed of wire (e.g., copper, gold, aluminum, or otherconductive material) bonded to the conductive pad layer(s).

As illustrated in FIG. 7E, a wafer support system (WSS) 530 may, forexample, be attached to one surface each of the conductive pad layers520 and each of the contact structures 522. For example, the WSS 530 maybe attached to the one surface of the conductive pad layer 520 and thecontact structures 522 using an adhesive 523. For example, the adhesive523 may be at least as thick as, or thicker than, the contact structures522. The WSS 530 may support and fix the conductive pad layers 520 in astate in which the dummy substrate is removed.

As illustrated in FIG. 7F, the dummy substrate 50 may be removed fromthe second surface 510 b of the first interposer 510. For example, thedummy substrate 50 may be removed by grinding the same by apredetermined thickness, followed by performing dry etching and/or wetetching, thereby completely removing the dummy substrate 50. As aresult, the second surface 510 b of the first interposer 510 may beexposed to the outside.

As illustrated in FIG. 7G, a semiconductor die 540 may be electricallyconnected to the second surface 510 b of the first interposer 510. Thesemiconductor die 540 may have a first surface 540 a and a secondsurface 540 b opposite to the first surface 540 a, and die contacts 541may be provided on the second surface 540 b. The semiconductor die 540may, for example, be electrically connected to a first redistributionlayer 512 at the second surface 510 b of the first interposer 510through the die contacts 541.

As illustrated in FIG. 7H, the second surface 510 b of the firstinterposer 510 and the semiconductor die 540 may be encapsulated usingan encapsulant 550. Prior to this process, an underfill 542 covering thedie contacts 541 between the semiconductor die 540 and the firstredistribution layer 512 may be formed after the die contacts 541 of thesemiconductor die 540 are electrically connected to the second surface510 b of the first interposer 510. Then, the encapsulant 550 may beformed to entirely cover the first surface 510 a of the first interposer510. Such covering may then, for example if exposure of thesemiconductor die 540 is desired, be followed by back grinding and/oretching or otherwise thinning (if needed) to allow the first surface 540a of the semiconductor die 540 to be exposed from the encapsulant 550.The semiconductor die 540 and the first interposer 510 may be protectedfrom external circumstances by the encapsulant 550. The encapsulant 350may, for example, include general epoxy, paste, molding compound, and/orequivalents thereof, but not limited thereto.

As illustrated in FIG. 7I, the WSS 530 attached to surfaces of each ofthe conductive pad layers 520 and the contact structures 522 may beremoved.

As described herein, according to this example, the placement andencapsulating of the semiconductor dies may be arranged as a final (or alater) process in the manufacturing method of the semiconductor device,for example after the formation of an interposer, thereby providing asemiconductor device having suppressed wafer warpage deformation due toa difference in the thermal expansion coefficient between thesemiconductor die and the first redistribution layer.

As shown in the example provided at FIG. 7, the stiffener structure maybe provided at or toward the interposer side of the package. The scopeof various aspects of this disclosure is not, however, limited to suchplacement. For example, the stiffener structure may alternatively, oradditionally, be provided at the mold side of the package. Non-limitingexamples of such structures and methods for forming such structures willnow be presented with references to FIGS. 8-11.

FIG. 8 is a flowchart illustrating an example method 800 formanufacturing a semiconductor device, in accordance with various aspectsof the present disclosure.

Referring to FIG. 8, the example method 800 of manufacturing asemiconductor device may, for example, comprise interposer preparing810, forming an RDL and contact pad 820, forming a contact structure830, WSS mounting 840, removing material 850, die attaching 860,encapsulating and grinding 870, stiffener forming 880, and WSS debonding890. The example method 800 may, for example, share any or allcharacteristics with the other methods discussed herein. The examplemanufacturing method of FIG. 8 will now be described in more detail withreference to FIGS. 9A to 9I.

FIGS. 9A to 9I show cross-sectional views illustrating various aspectsof the example method 800 shown in FIG. 8. It should be noted that FIGS.9A to 9I merely provide examples of various aspects of the method 800shown in FIG. 8. Accordingly, the scope of various aspects of the method800 should not be limited by the example illustrations of FIGS. 9A to9I.

First, as illustrated in FIG. 9A, an interposer 910 is prepared. Theinterposer 910 may, for example, be formed on a wafer substrate (e.g., asilicon wafer substrate), a substrate from a singulated wafer, etc. Theinterposer may, for example be formed by a fabrication (FAB) process,such as a semiconductor back-end-of-the-line (BEOL) process, but thepresent disclosure is not limited to the utilization of a fabricationprocess. Various examples of interposer formation are presented herein.The interposer 910 may have a first surface 910 a and a second surface910 b opposite to the first surface 910 a.

As shown in FIG. 9A, the interposer 910 is formed on a full-thicknesswafer. In such an example scenario, the wafer need not be full thicknessat this point. For example, the wafer may have been at least partiallythinned at a previous process step.

As illustrated in FIG. 9B, a redistribution layer (RDL) 915, which mayalso be referred to herein as a second interposer, and contact pad 920are formed (e.g., on the first surface 910 a of the interposer 910). Forexample, the interposer 910 as illustrated at FIG. 9A may be receivedfrom an upstream process, and the RDL 915 and contact pad 910 may beformed thereon. The RDL 915 and contact pad 920 may be formed in any ofa variety of manners generally associated with such structures. Forexample, the RDL 915 may be formed by forming a dielectric layer 916 andforming a conductive layer 917 on and/or extending through thedielectric layer. Such dielectric layer 916 and conductive layer 917forming may then be repeated multiple times if a multi-layer RDL isdesired. The RDL 915 may, for example, be formed in a process step thatis independent from the forming of the interposer 910. In an examplescenario, the interposer 910 may be formed in a FAB (e.g., a BEOL)process, and the RDL 915 may be formed in a post-FAB process (e.g., at asame general geographical site, or at distinct geographical sitescoupled by a shipping process). The RDL 915 may, for example, be formedusing different dielectric material, different conductive material,wider material, thicker material, etc., than the interposer 910. Forexample, dielectric material of the interposer 910 may comprise aninorganic dielectric, such as silicon oxide, silicon nitride, etc. Thedielectric material may also, for example, comprise an organic material.The dielectric material of the RDL 915 may comprise an organicdielectric, such as PBO, polyimide, etc. The dielectric material mayalso, for example, comprise an inorganic material. The contact pad 920(e.g., a bump pad) may, for example, be formed as a conductive portionof the RDL 915 that is exposed through dielectric material. The contactpad 920 may, for example, be coated (e.g., plated) with an under-contactmetal (e.g., an under-bump metal (UBM)) to enhance attachment of acontact structure to the contact pad 920 in a later process step.

As illustrated in FIG. 9C, a contact structure 930 (such as conductivebumps or balls, plated or preformed wire pillars, or other contactstructures comprising solder, copper, and/or other conductive material)may further be formed on the contact pad 920. The contact structure 930may, for example, be formed to be easily connected to a wafer supportsystem (WSS) 940 described herein. The contact structure 930 iselectrically connected to the contact pad 920. For example, in animplementation utilizing a conductive ball, volatile flux may be appliedto the contact pad 920, and the contact structure 930 comprising aconductive ball can be positioned on the flux, followed by applying heatof a temperature ranging from approximately 150° C. to approximately250° C. or 270° C. thereby connecting the contact structure 930 to thecontact pad 920 while allowing the flux to volatilize. Thereafter, acooling process may be performed to solidify the mechanical/electricalconnection between the contact structure 930 and the contact pad 920.

As illustrated in FIG. 9D, a wafer support system (WSS) 940 is mountedto the contact structure 930 and RDL 915. The WSS 940 may, for example,be mounted to the contact structure 930 and RDL 915 using an adhesive945 (or epoxy). The WSS 940 may comprise any of a variety of materials.For example, as with all wafer support systems discussed herein, the WSS940 may comprise glass, metal, ceramic, general dielectric material,etc. The adhesive 945 may, for example, generally be thick enough tosurround the entire contact structure 930. Alternatively, the WSS 940may comprise a compliant material into which at least a portion of thecontact structure 930 or the entire contact structure 930 may extend.The WSS 940 may, for example, support and fix the interposer 910 in astate in which material (e.g., excess silicon or other material) may beremoved from the interposer 910.

As illustrated in FIG. 9E, material is removed from the interposer 910.For example, in an example implementation in which traces of theinterposer 910 are formed on a silicon wafer, for example in a FABprocess, the excess wafer material may be removed (e.g., by grindingand/or etching, ablating, etc.). The WSS 940, for example, may provideprimary structural support for the interposer 910, RDL 915, and/orcontact structure 930 when the interposer 910 is thinned. In an exampleimplementation in which the interposer 910 is fabricated on a siliconwafer, the resulting thickness of the interposer 910 may, for example,be in the range of 8-10 microns or thinner.

As illustrated in FIG. 9F, one or more semiconductor die 950 areattached. For example, the semiconductor die 950 may be electricallyconnected to the interposer 910 (e.g., to the second surface 910 b ofthe interposer 910. The semiconductor die 950 has a first surface 950 aand a second surface 950 b opposite to the first surface 950 a, and adie contact 951 is provided on the second surface 950 b. Thesemiconductor die 950 is electrically connected to the interposer 910through the die contact 951 (and others like it). For example, thesemiconductor die 950 may be connected to the interposer 910 in a flipchip configuration. The die contact 951 may, for example, furtherinclude a solder cap formed at its end to facilitate a connection withthe interposer 910. The die contact 951 may, for example, generallycomprise a conductive structure formed on and/or attached to bond padson the die 950 (e.g., a bump on a bumped die, etc.).

As illustrated in FIG. 9G, encapsulant 960 (e.g., mold material) isapplied and ground. The interposer 910 and the semiconductor die 950 maybe encapsulated by the encapsulant 960. The encapsulant 960 may, forexample, be formed to entirely cover the second surface 910 b of theinterposer 910 and the semiconductor die 950. Such covering may then,for example if exposure of the semiconductor die 950 is desired, befollowed by back grinding and/or etching or otherwise thinning (ifneeded) to allow the first surface 950 a of the semiconductor die 950 tobe exposed from the encapsulant 960 and/or thinned. In other examples,the first surface 950 a of the die 950 may be left uncovered by theencapsulant 960 during encapsulation. The interposer 910 and thesemiconductor die 950 may be environmentally and/or electricallyprotected from external circumstances by the encapsulant 960. Theencapsulant 960 may, for example, include general epoxy, paste, moldingcompound, and equivalents thereof, but is not limited thereto.

Note that although the mold material 960 is illustrated underfilling thedie 950, a separate underfill may be utilized. Such underfilling isdiscussed herein (e.g., injected, deposited, taped, etc.) with regard toother examples.

As illustrated in FIG. 9H, a stiffener 970 is formed. A non-limitingexample stiffener is presented herein in the discussion of FIG. 7C, butthe scope of this disclosure is not limited by the characteristics ofsuch example. The stiffener 970 may, for example, be formed on (e.g.,directly on) the surface of the encapsulant 960 and/or the first surface950 a of the semiconductor die 950. The stiffener 970 may be formed inany of a variety of manners. For example, the stiffener 970 may beformed by sputtering, chemical vapor deposition, plating, etc., on theencapsulant 960 and/or first surface 950 a. In other words, thestiffener 970 may be integrally coupled to the encapsulant 960 and/ordie 950 without using adhesive, and thus for example act more directlyto counteract warpage in the underlying structure than would be possiblewith an intervening adhesive layer.

In the example shown in FIG. 9H, the stiffener 970 comprises threeconductive layers, for example two outer layers (e.g., copper layers)and a middle layer (e.g., nickel), though any number of layers may beutilized (e.g., single layer, dual layer, etc.). Though the two outerlayers are shown with a same thickness, they may be formed withdifferent respective thicknesses. Though the center layer is shownthicker than the outer layers, the center layer may be the samethickness or thinner than one or both of the outer layers. Also, thoughthe two outer layers may comprise a same material (e.g., copper), theycomprise different materials.

In general, the composition and/or geometry of the stiffener 970layer(s) may be selected to counteract warpage forces acting on thestructure comprising the interposer 910, RDL 915, die 950, mold material960, etc. For example, if the stiffener-less structure comprises forces(e.g., forces due to mismatched thermal expansion coefficients) actingto cause the ends of the structure to bend upward with a force F, thestiffener layer(s) 970 may be selected to provide a force acting tocause the ends of the stiffener 970 to bend downward with an oppositeforce −F, resulting in an overall structure for the electronic packagethat stays generally flat under the influence of a variety oftemperature conditions. The warpage forces may, for the stiffener-lessstructure and/or the stiffener, be determined theoretically and/orempirically.

The stiffener 970 layer(s) may also, for example, be continuous oruniform across the surface on which they are formed rather thanpatterned. Note, however, that in various example implementations someor all of the stiffener 970 layers may be patterned (e.g., to accountfor varying stress conditions across the electronic package) and/or mayhave a varying thickness.

The example stiffener 970 discussed herein is generally formed fromconductive metal material, but may be formed from any of a variety ofmaterials. For example, the stiffener 970 may comprise composites,oxides, nitrides, etc. In a scenario comprising the utilization ofmaterials such as oxides and/or nitrides, sputtering or other techniquesmay be utilized to form the stiffener 970 layer(s).

The stiffener 970, when formed at least in part of conductive material,may be utilized to provide electromagnetic shielding for the electroniccomponents of the package. Additionally, for example, the stiffener 970may be utilized to provide ground and/or power signals to one or morecomponents of the package (or other devices stacked on the package).

As shown in this example, the stiffener 970 layer(s) may be formed priorto removal of the WSS 940.

As illustrated in FIG. 9I, the wafer support system (WSS) 940 is removed(e.g., debonded). For example, the WSS 940 and adhesive 945 may beremoved, for example by mechanical, chemical, and/or electrical means.The WSS 940 may, for example, be removed in a non-destructive manner,thus preserving the WSS 940 for use in the formation of anotherelectronic package.

The WSS 940 debonding step may, for example, complete formation of theelectronic package. Note, however, that further processing steps mayalso be performed. For example, in an implementation in which thecontact structures 930 have not yet been formed, they may now be formed.Also for example, as shown herein, a dicing step may be performed.Additionally for example, the completed semiconductor device may bemounted to be electrically connected (e.g., directly connected) to aprinted circuit board (PCB) or other substrate (or wafer, othersemiconductor device, die, etc.) through the contact structures 930.

In the example just discussed, the stiffener 970 is formed relativelylate in the process. In another example implementation, the stiffener970 may be formed earlier in the process. An example of this will now bepresented.

FIG. 10 is a flowchart illustrating an example method 1000 formanufacturing a semiconductor device, in accordance with various aspectsof the present disclosure.

Referring to FIG. 10, the example method 1000 of manufacturing asemiconductor device may, for example, comprise interposer preparing1010, die attaching 1020, encapsulating and grinding 1030, stiffenerforming 1040, mounting a WSS 1050, removing material 1060, forming anRDL and contact pad 1070, forming a contact structure 1080, and WSSdebonding 1090. The example method 1000 may, for example, share any orall characteristics with the other methods discussed herein. The examplemanufacturing method of FIG. 10 will now be described in more detailwith reference to FIGS. 11A to 11I.

FIGS. 11A to 11I show cross-sectional views illustrating various aspectsof the example method 1000 shown in FIG. 10. It should be noted thatFIGS. 11A to 11I merely provide examples of various aspects of themethod 1000 shown in FIG. 10. Accordingly, the scope of various aspectsof the method 1000 should not be limited by the example illustrations ofFIGS. 11A to 11I.

First, as illustrated in FIG. 11A, an interposer 1110 is prepared. Theinterposer 1110 may, for example, be formed on a wafer substrate (e.g.,a silicon wafer substrate), a substrate from a singulated wafer, etc.The interposer may, for example be formed by a fabrication (FAB)process, but the present disclosure is not limited to the utilization ofa fabrication process. Various examples of interposer formation arepresented herein. The interposer 1110 may have a first surface 1110 aand a second surface 1110 b opposite to the first surface 1110 a.

As shown in FIG. 11A, the interposer 1110 is formed on a full-thicknesswafer. In such an example scenario, the wafer need not be full thicknessat this point. For example, the wafer may have been at least partiallythinned at a previous process step.

As illustrated in FIG. 11B, one or more semiconductor die 1150 areattached. For example, the semiconductor die 1150 may be electricallyconnected to the interposer 1110 (e.g., to the first surface 1110 a ofthe interposer 1110. The semiconductor die 1150 has a first surface 1150a and a second surface 1150 b opposite to the first surface 1150 a, anda die contact 1151 is provided on the second surface 1150 b. Thesemiconductor die 1150 is electrically connected to the interposer 1110through the die contact 1151 (and others like it). For example, thesemiconductor die 1150 may be connected to the interposer 1110 in a flipchip configuration. The die contact 1151 may, for example, furtherinclude a solder cap formed at its end to facilitate a connection withthe interposer 1110. The die contact 1151 may, for example, generallyinclude a conductive structure formed on and/or attached to bond pads onthe die 1150 (e.g., a bump on a bumped die, etc.).

As illustrated in FIG. 11C, encapsulant 1160 (e.g., mold material) isapplied and ground. The interposer 1110 and the semiconductor die 1150may be encapsulated by the encapsulant 1160. The encapsulant 1160 may,for example, be formed to entirely cover the first surface 1110 a of theinterposer 1110 and the semiconductor die 1150. Such covering may then,for example if exposure of the semiconductor die 1150 is desired, befollowed by back grinding and/or etching or otherwise thinning (ifneeded) to allow the first surface 1150 a of the semiconductor die 1150to be exposed from the encapsulant 1160 and/or thinned. In otherexamples, the first surface 1150 a of the die 1150 may be left uncoveredby the encapsulant 1160 during encapsulation. The interposer 1110 andthe semiconductor die 1150 may be environmentally and/or electricallyprotected from external circumstances by the encapsulant 1160. Theencapsulant 1160 may, for example, include general epoxy, paste, moldingcompound, and equivalents thereof, but is not limited thereto.

Note that although the mold material 1160 is illustrated underfillingthe die 1150, a separate underfill may be utilized. Such underfilling isdiscussed herein (e.g., injected, deposited, taped, etc.) with regard toother examples.

As illustrated in FIG. 11D, a stiffener 1170 is formed. Non-limitingexample stiffeners are presented herein in the discussions of FIGS. 7Cand 9H, but the scope of this disclosure is not limited by thecharacteristics of such examples. The stiffener 1170 may, for example,be formed on (e.g., directly on) the surface of the encapsulant 1160and/or the first surface 1150 a of the semiconductor die 1150. Thestiffener 1170 may be formed in any of a variety of manners. Forexample, the stiffener 1170 may be formed by sputtering, chemical vapordeposition, plating, etc., on the encapsulant 1160 and/or first surface1150 a. In other words, the stiffener 1170 may be integrally coupled tothe encapsulant 1160 and/or die 1150 without using adhesive, and thusfor example act more directly to counteract warpage in the underlyingstructure than would be possible with an intervening adhesive layer.

In the example shown in FIG. 11D, the stiffener 1170 comprises threeconductive layers, for example two outer layers (e.g., copper layers)and a middle layer (e.g., nickel), though any number of layers may beutilized (e.g., single layer, dual layer, etc.). Though the two outerlayers are shown with a same thickness, they may be formed withdifferent respective thicknesses. Though the center layer is shownthicker than the outer layers, the center layer may be the samethickness or thinner than one or both of the outer layers. Also, thoughthe two outer layers may comprise a same material (e.g., copper), theycomprise different materials.

In general, the composition and/or geometry of the stiffener 1170layer(s) may be selected to counteract warpage forces acting on thestructure comprising the interposer 1110, RDL 1115 (discussed below),die 1150, mold material 1160, etc. For example, if the stiffener-lessstructure comprises forces (e.g., thermal mismatch forces) acting tocause the ends of the structure to bend upward with a force F, thestiffener layer(s) 1170 may be selected to provide a force acting tocause the ends of the stiffener 1170 to bend downward with an oppositeforce −F, resulting in an overall structure for the electronic packagethat stays generally flat under the influence of a variety oftemperature conditions. The warpage forces may, for the stiffener-lessstructure and/or the stiffener, be determined theoretically and/orempirically.

The stiffener 1170 layer(s) may also, for example, be continuous oruniform across the surface on which they are formed rather thanpatterned. Note, however, that in various example implementations someor all of the stiffener 1170 layers may be patterned (e.g., to accountfor varying stress conditions across the electronic package) and/or mayhave a varying thickness.

The example stiffener 1170 discussed herein is generally formed fromconductive metal material, but may be formed from any of a variety ofmaterials. For example, the stiffener 1170 may comprise composites,oxides, nitrides, etc. In a scenario comprising the utilization ofmaterials such as oxides and/or nitrides, sputtering or other techniquesmay be utilized to form the stiffener 1170 layer(s).

The stiffener 1170, when formed at least in part of conductive material,may be utilized to provide electromagnetic shielding for the electroniccomponents of the package. Additionally, for example, the stiffener 1170may be utilized to provide ground and/or power signals to one or morecomponents of the package (or other devices stacked on the package).

As shown in this example, the stiffener 1170 layer(s) may be formedprior to removal of the excess material and removal of the WSS 1140(discussed below).

As illustrated in FIG. 11E, a wafer support system (WSS) 1140 is mountedto the stiffener 1170. The WSS 1140 may, for example, be mounted to thestiffener 1170 using an adhesive 1145 (or epoxy). The WSS 1140 maycomprise any of a variety of materials. For example, as with all wafersupport systems discussed herein, the WSS 1140 may comprise glass,metal, ceramic, general dielectric material, etc. The WSS 1140 may, forexample, support and fix the interposer 1110 in a state in whichmaterial (e.g., excess silicon or other material) may be removed fromthe interposer 1110.

As illustrated in FIG. 11F, material is removed from the interposer1110. For example, in an example implementation in which traces of theinterposer 1110 are formed on a silicon wafer, for example in a FABprocess, the excess wafer material may be removed (e.g., by grindingand/or etching, ablating, etc.). The WSS 1140, for example, may provideprimary structural support for the interposer 1110, RDL 1115 (discussedbelow), and/or contact structure 1130 (discussed below) when theinterposer 1110 is thinned. In an example implementation in which theinterposer 1110 is fabricated on a silicon wafer, the resultingthickness of the interposer 1110 may, for example, be in the range of8-10 microns or thinner

As illustrated in FIG. 11G, a redistribution layer (RDL) 1115, which mayalso be referred to herein as a second interposer, and a contact pad1120 are formed (e.g., on the second surface 1110 b of the interposer1110). The RDL 1115 and contact pad 1120 may be formed in any of avariety of manners generally associated with such structures. Forexample, the RDL 1115 may be formed by forming a dielectric layer 1116and forming a conductive layer 1117 on and/or extending through thedielectric layer. Such dielectric layer 1116 and conductive layer 1117forming may then be repeated multiple times if a multi-layer RDL isdesired. The RDL 1115 may, for example, be formed in a process step thatis independent from the forming of the interposer 1110. In an examplescenario, the interposer 1110 may be formed in a FAB process, and theRDL 1115 may be formed in a post-FAB process. The RDL 1115 may, forexample, be formed using different dielectric material, differentconductive material, wider material, thicker material, etc., than theinterposer 1110. The contact pad 1120 (e.g., a bump pad) may, forexample, be formed as a conductive portion of the RDL 1115 that isexposed through dielectric material. The contact pad 1120 may, forexample, be coated (e.g., plated) with an under-contact metal (e.g., anunder-bump metal (UBM)) to enhance attachment of a contact structure tothe contact pad 1120 in a later process step.

As illustrated in FIG. 11H, a contact structure 1130 (such as conductivebumps or balls, plated or wire pillars, or other contact structurescomprising solder, copper, and/or other conductive material) may furtherbe formed on the contact pad 1120. The contact structure 1130 iselectrically connected to the contact pad 1120. For example, in animplementation utilizing a conductive ball, volatile flux may be appliedto the contact pad 1120, and the contact structure 1130 comprising aconductive ball can be positioned on the flux, followed by applying heatof a temperature ranging from approximately 150° C. to approximately250° C. or 270° C. thereby connecting the contact structure 1130 to thecontact pad 1120 while allowing the flux to volatilize. Thereafter, acooling process may be performed to solidify the mechanical/electricalconnection between the contact structure 1130 and the contact pad 1120.

As illustrated in FIG. 11I, the wafer support system (WSS) 1140 isremoved (e.g., debonded). For example, the WSS 1140 and adhesive 1145may be removed, for example by mechanical, chemical, and/or electricalmeans. The WSS 1140 may, for example, be removed in a non-destructivemanner, thus preserving the WSS 1140 for use in the formation of anotherpackage.

The WSS 1140 debonding step may, for example, complete formation of theelectronic package. Note, however, that further processing steps mayalso be performed. For example, in an implementation in which thecontact structures 1130 have not yet been formed, they may now beformed. Also for example, as shown herein, a dicing step may beperformed. Additionally for example, the completed semiconductor devicemay be mounted to be electrically connected (e.g., directly connected)to a printed circuit board (PCB) or other substrate (or wafer, othersemiconductor device, die, etc.) through the contact structures 1130.

The examples presented herein have address the above-described drawbacksby providing a method for manufacturing a semiconductor device and thesemiconductor device produced thereby, which can prevent warpagedeformation from occurring to a wafer due to, for example, a differencein the thermal coefficient between a semiconductor die and an interposeror redistribution layer, and/or between various other semiconductordevice components, by for example arranging encapsulating thesemiconductor die and a redistribution layer as a final (or later)process, for example after the formation of the interposer, byincorporating various stiffening structures, etc.

In accordance with various aspects of the present disclosure, there isprovided herein a manufacturing method of a semiconductor device, themanufacturing method including forming an interposer including aredistribution layer and a dielectric layer on one surface of a dummysubstrate, connecting contact structures to a first surface of theinterposer, removing the dummy substrate, attaching a wafer supportsystem (WSS) on the first surface of the interposer and the contactstructures connected to the first surface of the interposer, connectinga semiconductor die to a second surface of the interposer opposite tothe first surface of the interposer, encapsulating the second surface ofthe interposer and the semiconductor die using an encapsulant, grindingthe encapsulant to expose one surface of the semiconductor die, removingthe WSS, and connecting the first surface of the interposer from whichthe WSS is removed to a circuit board.

In accordance with various aspects of the present disclosure, there isprovided herein a manufacturing method of a semiconductor device, themanufacturing method including forming an interposer including aredistribution layer and a dielectric layer on one surface of a dummysubstrate, connecting contact structures to a first surface of theinterposer, first encapsulating the first surface of the interposer andthe contact structures using a first encapsulant, removing the dummysubstrate, attaching a wafer support system (WSS) on the first surfaceof the interposer and the contact structures connected to the firstsurface of the interposer, connecting the semiconductor die to a secondsurface of the interposer opposite to the first surface of theinterposer, second encapsulating the second surface of the interposerand the semiconductor die using a second encapsulant, grinding thesecond encapsulant to expose one surface of the semiconductor die, andremoving the WSS.

In accordance with various aspects of the present disclosure, there isprovided herein a semiconductor device including an interposer having afirst surface and a second surface opposite to the first surface andincluding a redistribution layer and a dielectric layer, a contactstructures connected to the first surface of the interposer, a firstencapsulant layer encapsulating the first surface of the interposer andthe contact structures, a semiconductor die mounted on the secondsurface of the interposer and electrically connected to theredistribution layer, and a second encapsulant layer encapsulating thesecond surface of the interposer and the semiconductor die.

In accordance with various aspects of the present disclosure, there isprovided herein a manufacturing method of a semiconductor device, themanufacturing method including forming a first interposer including afirst redistribution layer and a first dielectric layer on a firstsurface of a dummy substrate, attaching a first wafer support system(WSS) on a first surface of the first interposer, removing the dummysubstrate, forming a second interposer including a second redistributionlayer and a second dielectric layer on a second surface of the firstinterposer, opposite to the first surface of the first interposer,attaching a second WSS on a first surface of the second interposer,removing the first WSS, connecting a semiconductor die on the firstsurface of the first interposer, encapsulating the first surface of thefirst interposer and the semiconductor die using an encapsulant,grinding the encapsulant to expose one surface of the semiconductor die,and removing the second WSS.

In accordance with various aspects of the present disclosure, there isprovided a manufacturing method of a semiconductor device, themanufacturing method including forming a first interposer including afirst redistribution layer and a first dielectric layer on a firstsurface of a dummy substrate, attaching a first wafer support system(WSS) on a first surface of the first interposer, removing the dummysubstrate, forming a second interposer including a second redistributionlayer and a second dielectric layer on a second surface of the firstinterposer, opposite to the first surface of the first interposer,attaching a second WSS on a first surface of the second interposer,removing the first WSS, connecting a semiconductor die on the firstsurface of the first interposer, forming a copper contact between thesemiconductor dies on the first surface of the first interposer,encapsulating the first surface of the first interposer, thesemiconductor die and the copper contact using an encapsulant, grindingthe encapsulant to expose one surface of the copper contact, andconnecting a solder ball to the one surface of the copper contact.

In accordance with various aspects of the present disclosure, there isprovided a semiconductor device including an interposer having a firstsurface and a second surface opposite to the first surface and includinga redistribution layer and a dielectric layer, a semiconductor diemounted on the first surface of the interposer and electricallyconnected to the redistribution layer, a copper contact formed betweenthe semiconductor dies on the first surface of the interposer, anencapsulation layer encapsulating the first surface of the interposerand the semiconductor die, and a solder ball formed at an exposed end ofthe copper contact.

In accordance with various aspects of the present disclosure, there isprovided a manufacturing method of a semiconductor device, themanufacturing method including forming a first interposer including afirst redistribution layer and a first dielectric layer on a firstsurface of a dummy substrate, forming a second interposer including asecond redistribution layer and a second dielectric layer on the firstsurface of the dummy substrate, forming one or insulation fillers on afirst surface of the second interposer, forming one or more conductivepad layers connected to the second redistribution layer between thefirst surface of the second interposer and the insulation fillers,connecting contact structures on conductive pad layers alternatelyformed among conductive pad layers between the insulation fillers,attaching a wafer support system (WSS) on a first surface of the firstinterposer, removing the dummy substrate, connecting a semiconductor dieto a second surface of the first interposer, opposite to the firstsurface of the first interposer, encapsulating the second surface of thefirst interposer and the semiconductor die using an encapsulant, andremoving the WSS.

In accordance with various aspects of the present disclosure, there isprovided a semiconductor device including an interposer having a firstsurface and a second surface opposite to the first surface and includinga redistribution layer and a dielectric layer, a semiconductor diemounted on the first surface of the interposer and electricallyconnected to the redistribution layer, an encapsulant layerencapsulating the first surface of the interposer and the semiconductordie, one or more insulation fillers formed on the second surfaceopposite to the first surface of the interposer to be spaced apart fromeach other, conductive pad layers electrically connected to theredistribution layer between the insulation fillers on the secondsurface of the interposer, and contact structures formed on theconductive pad layers alternately formed among the conductive pad layersbetween the insulation fillers

In summary, various aspects of this disclosure provide a semiconductordevice structure and a method for manufacturing a semiconductor device.While the foregoing has been described with reference to certain aspectsand embodiments, it will be understood by those skilled in the art thatvarious changes may be made and equivalents may be substituted withoutdeparting from the scope of the disclosure. In addition, manymodifications may be made to adapt a particular situation or material tothe teachings of the disclosure without departing from its scope.Therefore, it is intended that the disclosure not be limited to theparticular embodiment(s) disclosed, but that the disclosure will includeall embodiments falling within the scope of the appended claims.

What is claimed is:
 1. A method of manufacturing a semiconductor device,the method comprising: coupling a wafer support system (WSS) on a firstside of an interposer, where the interposer comprises contact structureson the first side of the interposer and the interposer comprises asecond side on a temporary substrate; removing the temporary substrate;coupling a semiconductor die and the second side of the interposer;encapsulating the semiconductor die with an encapsulant; and removingthe WSS, wherein the second side of the interposer and the semiconductordie are covered by the encapsulant.
 2. The method of claim 1, whereinprior to said removing the temporary substrate, the second side of theinterposer is directly on the temporary substrate.
 3. The method ofclaim 1, wherein said coupling the semiconductor die is performed aftersaid coupling the WSS.
 4. The method of claim 1, wherein saidencapsulating the semiconductor die is performed after said coupling thesemiconductor die and the second side of the interposer.
 5. The methodof claim 1, wherein the contact structures comprise conductive bumps. 6.The method of claim 1, wherein said coupling the semiconductor die andthe second side of the interposer comprises directly coupling thesemiconductor die and the second side of the interposer without aseparate underfill between the semiconductor die and the second side ofthe interposer.
 7. The method of claim 1, comprising forming theinterposer by, at least in part: forming a dielectric layer comprisingopenings to the substrate; and forming a conductive layer in theopenings to the substrate.
 8. The method of claim 1, wherein thetemporary substrate comprises a glass carrier.
 9. A method ofmanufacturing a semiconductor device, the method comprising: coupling awafer support system (WSS) on a first side of an interposer, where theinterposer comprises contact structures on the first side of theinterposer and the interposer comprises a second side on a temporarysubstrate; removing the temporary substrate; coupling a semiconductordie to the second side of the interposer; encapsulating the second sideof the interposer and the semiconductor die with an encapsulant; andremoving the WSS.
 10. The method of claim 9, wherein the contactstructures comprise copper.
 11. The method of claim 9, wherein thecontact structures comprise under bump metallization.
 12. The method ofclaim 9, comprising prior to said encapsulating, forming an underfillbetween the semiconductor die and the second side of the interposer. 13.The method of claim 9, comprising thinning the encapsulant.
 14. Themethod of claim 13, comprising thinning the encapsulant to expose thesemiconductor die.
 15. The method of claim 9, wherein the temporarysubstrate comprises a silicon wafer.
 16. A method of manufacturing asemiconductor device, the method comprising: coupling a wafer supportsystem (WSS) on a first side of an interposer, where the interposercomprises contact structures on the first side of the interposer and theinterposer comprises a second side on a temporary substrate, where thesecond side of the interposer is opposite the first side of theinterposer; removing the temporary substrate; coupling a semiconductordie to the second side of the interposer; forming conductive pillars onthe second side of the interposer, the conductive pillars extendingfarther from the second side of the interposer than the semiconductordie; and removing the WSS.
 17. The method of claim 16, comprisingencapsulating the second side of the interposer, the semiconductor die,and the conductive pillars with an encapsulant.
 18. The method of claim17, comprising thinning the encapsulant to expose the conductive pillarsbut not the semiconductor die.
 19. The method of claim 17, wherein theconductive pillars are exposed from the encapsulant and comprisingforming conductive layers on the exposed conductive pillars.
 20. Themethod of claim 16, wherein the conductive pillars comprise copperpillars.